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| SMD Type HEXFET Power MOSFET KRF7507 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current VGS Ta = 25 Continuous Drain Current VGS Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10 S Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient*3 VGS VGSM dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM N-Channel 20 2.4 1.9 21 1.25 0.8 10 12 16 5.0 P-Channel -20 -1.7 -1.4 -14 Unit V A @Ta= 25 @Ta= 70 PD W mW/ V V -5.0 V/ ns -55 to + 150 100 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 1.7A, di/dt -1.2A, di/dt 100A/ 50A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type IC IC Electrical Characteristics TJ = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 4.5V, ID = 1.7A*1 VGS = 2.7V, ID = 0.85A*1 VGS = -4.5V, ID = -1.2A*1 VGS = -2.7V, ID = -0.6A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =10V, ID = 0.85A*1 VDS = -10V, ID = -0.6A*1 VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125 VDS = -16V, VGS = 0V, TJ = 125 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -1.2A,VDS = -16V,VGS = -4.5V *1 N-Channel VDD = 10V,ID = 1.7A,RG = 6.0 RD = 5.7 P-Channel VDD = -10V,ID = -1.2A,RG = 6.0 RD = 8.3 1*1 *1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 15V,f = 1.0MHz *1 P-Channel VGS = 0V,VDS = -15V,f = 1.0MHz *1 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 20 -20 Typ Max Unit V 0.041 0.012 0.085 0.14 0.120 0.20 0.17 0.28 0.7 -0.7 2.6 1.3 1.0 -1.0 25 -25 100 100 5.3 5.4 0.84 0.96 2.2 2.4 5.7 9.1 24 35 15 38 16 43 260 240 130 130 61 64 1.25 -1.25 19 -14 8.0 8.2 1.3 1.4 3.3 3.6 0.27 0.40 TJ V/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance VGS(th) gfs V S Drain-to-Source Leakage Current IDSS A Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Body Diode) IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VGS = 12V nA N-Channel ID =1.7A,VDS = 16V,VGS =4.5V *1 nC ns pF A Body Diode) *2 2 www.kexin.com.cn SMD Type KRF7507 Electrical Characteristics TJ = 25 Parameter Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Symbol VSD trr Qrr Testconditons TJ = 25 , IS = 1.7A, VGS = 0V*1 TJ = 25 , IS = -1.2A, VGS = 0V*1 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ P-Channel TJ=25 , IF=-1.2A,di/dt=-100A/ s*1 s*1 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 39 52 37 63 Min Typ IC IC Max 1.2 -1.2 59 78 56 95 Unit V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. www.kexin.com.cn 3 |
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